Structure and Method for Placement, Sizing and Shaping of Dummy Structures

ABSTRACT

A material layer on a substrate being processed, e.g. to form chips, includes one or more functional structures. In order to control pattern density during fabrication of the chip, dummy fill structures of different sizes and shapes are added to the chip at different distances from the functional structures of the material layer. In particular, the placement, size and shape of the dummy structures are determined as a function of a distance to, and density of, the functional structures of the material layer.

This application is a divisional of U.S. application Ser. No.11/441,649, which was filed on May 26, 2006, and entitled “Structure andMethod for Placement, Sizing and Shaping of Dummy Structures”, which, inturn, is a continuation of U.S. application Ser. No. 10/671,123,entitled “Structure and Method for Placement, Sizing and Shaping ofDummy Structures”, filed on Sep. 24, 2003. Both applications are herebyincorporated herein by reference.

BACKGROUND

The present invention relates to microelectronic devices andmicro-mechanical or micro-electromechanical devices (either type or bothtypes hereinafter, “MEMs”), and more particularly, to a structure andmethod of providing dummy structures in a layer of material of asubstrate during the fabrication of microelectronic devices and MEMs toachieve more uniform developer solution rates, etching rates, and rateat which the height of features of a layer are reduced duringplanarization processes such as chemical mechanical polishing (CMP).

In the fabrication of microelectronic devices of integrated circuits(ICs) and MEM dies (ICs and MEM dies also referred to herein as“chips”), it is important that certain processes be conducted at uniformrates across the surface of a substrate or wafer on which the chips arefabricated. This is needed despite the fact that the size of layoutfeatures and their density may vary from one point to another on thesubstrate. An example of such process is the development of an exposurepattern in a photoresist layer on a wafer. In such process, aphotoresist (hereinafter “resist”) layer is deposited onto a wafer and aphotolithographic image is cast on the layer. Thereafter, a developersolution is applied to the resist layer, which chemically reacts withthe exposed areas of the resist layer to remove such areas, leaving onlythe areas that are unexposed by the photolithographic image.

A problem occurs when a resist layer contains features of differentdensities and sizes. Under such circumstances, the concentration ofreactants and reaction products varies from the densely patterned areasto the other areas. As a result, the developer solution used to etchaway the exposed areas of the resist layer may etch the resist in thedensely patterned areas at a slower rate than in the less denselypatterned areas.

The etching of a material layer by a chemical etchant is another processthat can vary in uniformity across a wafer depending upon the size anddensity of features. Again, variation in the size and density offeatures can cause the concentration of reactants and reaction productsto vary, thus making the process nonuniform.

The polishing of material layers of a wafer is yet another process thatcan vary in uniformity across a wafer, depending upon the size anddensity of features. Polishing, especially chemical mechanical polishing(CMP) is often used in the fabrication of chips to reduce the topographyof features in a material layer. Polishing may also be used to removeexcess deposited material from above a patterned feature layer. Forexample, polishing is used to remove excess oxide after shallow trenchisolations are filled and to remove excess metal after filling damascenemetallization patterns. Polishing, especially CMP, is used to planarizea material layer.

A goal of such polishing processes is to smooth variations in thetopography of features and, in some cases, to smooth a material layer toa uniformly planar surface. Failure to achieve such goals can hinder thefunction of features in a material layer and/or hinder subsequentprocessing in a manner that can cause device degradation and reduceyields.

It is known that the density of raised areas in a material layerdirectly affects the aforementioned rates. For example, it is known thatthe removal rate of material during polishing is inversely proportionalto the surface area of the wafer in contact with the polisher. Thissurface area is also referred to herein as the “pattern density” whichis directly proportional to the area of raised features on a wafer. Suchraised features can be, for example, the result of material depositionsto fill trenches and/or gaps within a dielectric material, a metal orsemiconductor material.

Two chips having different layouts can have different pattern densities,and even one chip can have material layers which vary in pattern densityacross the chip. Wafers on which such chips are fabricated canthemselves have areas near the edge that are smaller than the chip diesize, and therefore not have any layout features in such areas.Consequently, CMP processing results in different removal rates indifferent areas of each such chip or wafer. If the same process is usedto polish a corresponding layer of two wafers from which two differenttypes of chips having different pattern densities are formed, resultswill vary for the two wafers. On the wafer having the greater patterndensity, the height of features will be reduced to a lesser extent thanthe wafer having the lower pattern density.

A number of approaches have been developed in an effort to mitigate theeffect of pattern density variations in wafer processing. U.S. Pat. No.5,639,697 issued Jun. 17, 1997 to Weling et al. describes a method ofusing dummy structures in pattern layers of a wafer to provide moreuniform pattern density across the wafer. The dummy structures serve toraise the pattern density in areas of the wafer. The dummy structuresare not electrically active elements of the chip when fabrication iscompleted. As described in the above-mentioned patent, these dummystructures can be any shape and size and can be placed uniformly ornon-uniformly in areas of the wafer. Thus, with the addition of dummystructures, areas of a wafer having different layouts can be made toapproximate the same pattern density value to achieve, for example,improved planarization during CMP.

As an alternative, it is also known to use a method known as reverseetchback to reduce the pattern density in some fabrication processes. Inthis method, pattern density is controlled by removing material from aregion of high material density by etching away portions of the raisedareas, thus lowering the density (and, therefore, the surface area) ofthat region.

The article “Using Smart Dummy Fill and Selective Reverse Etchback forPattern Density Equalization” by Lee et al., Proc. CMP-MIC, pp. 255-258,March 2000, describes another process for controlling pattern density ofa layer during fabrication, for example, a shallow trench isolation(STI) fill layer. As described therein, variations in pattern densityare reduced through a combination of reverse etchback and addition ofdummy structures

Unfortunately, the above techniques still have limitations with respectto improving the yield and reliability of chip fabrication.

SUMMARY OF THE INVENTION

Still, further improvements are desirable to control pattern density inprocessing material layers of a substrate. In particular, according toan aspect of the invention, the location, size, and/or shape of a dummystructure added to a material layer is selected on the basis of distancefrom neighboring functional features.

According to another aspect of the invention, the location, size, and/orshape of a dummy structure that are/is added to a material layer isselected on the basis of pattern density of neighboring functionalfeatures.

With the addition of dummy structures to the layout of a material layerof a substrate, it is possible to improve yield and reliability in thefabrication of chips. In an embodiment of the invention, a materiallayer of a substrate comprises a number of functional structures. Inorder to control pattern density during fabrication, dummy fillstructures of different sizes are added to the material layer atdifferent distances from the functional structures of the materiallayer. In particular, the placement and size and shape of the dummystructures are determined as a function of a distance to, and densityof, the functional structure(s) in the material layer of the substrate.

In another embodiment of the invention, dummy structures are placed on asemiconductor device such that the dummy structures have different sizesand shapes. In particular, the different sizes and shapes of the dummystructures are selected as a function of the density and distance to thefunctional structures of the semiconductor device.

Another aspect of the invention relates to methods of fabricating achip. First, the density (ρ), width (a) and location of functionalstructures of the chip are determined. Then, the shape, size andplacement of a dummy structure is determined as a function of thedensity ρ and the width a. In particular, the placement, C_(x) of thedummy structure is a function of a and ρ; and the size of the dummystructure, b_(x), is a function of the placement C_(x). The shape of thedummy structure is preferably a function of the size b_(x). The shape ofthe dummy structure is illustratively a regular polygon such that theenclosed area is illustratively maximized as a function of the sizeb_(x).

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 and 2 show diagrams of an illustrative semiconductor device inaccordance with the principles of the invention; and

FIG. 3 shows an illustrative flow chart embodying the principles of theinvention.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

Other than the inventive concept, the apparatus and methods forfabricating chips are well-known and are not described further herein.Also, like numbers on different figures represent similar elements.

A top view of a representative layer 101 of an illustrative substrate100 or formed on such substrate 100 is shown in FIG. 1. Illustratively,substrate 100 can be a semiconductor wafer, or can be any one of manydifferent types of substrates on which processing is performed topattern one or more layers thereof or formed thereon in the fabricationof microelectronic devices, MEMs and associated packaging. As definedherein, “layer” can be a layer formed on a substrate and can be aportion or all of the substrate itself. Substrate 100 comprises threefunctional areas: 105, 110 and 115 arranged on layer 101. Thesefunctional areas represent raised areas of a layer 101 and may include,but are not limited to, one or more of the following: active elements,passive elements, and conductive traces, for example.

For illustrative purposes only, only three functional areas are shown. Alayer 101 may have more or less functional areas and a substrate mayinclude one or more additional layers. In addition, the functional areasmay include raised features that are disposed in more than one layer 101of the substrate. As such, although the inventive concept is describedin the context of layer 101, the inventive concept may also be appliedto other layers. In addition, it should be noted that the inventiveconcept may also be applied to adding dummy structures to, e.g., aninsulating oxide layer over a functional area such as a conductivetrace. Further, the topography of substrate 100, i.e., the physicallocation of functional areas 105, 110 and 115 on layer 101 is merelyillustrative.

In accordance with the inventive concept, in order to equilibratedeveloper solution rates and etching rates, and to maintain removal rateconsistency during polishing (e.g., via use of CMP), dummy structuresare added to a layer 101. Illustratively, dummy structures are added asa function of the distance to and density of the functional areas. Otherthan the inventive concept, methods for adding dummy structures to alayer are well known. In an example, dummy structures can be added to alayout of functional areas of a chip at the time of processing designdata to create patterns of a photomask that include both functionalareas and dummy structures. The photomask can then be used to producecorresponding structures on a layer 101. In another example, a layer 101having raised features already formed on a substrate 100 can be alteredwith the addition of dummy structures to produce the desired pattern.

Turning now to FIG. 2, an illustrative arrangement of dummy structureson layer 101 of substrate 100 in accordance with the principles of theinvention is shown. In particular a number of octagon shaped dummystructures have been added to layer 101. Illustratively, seven octagonshapes have been added. Shapes 155-1 and 155-2 represent two octagonshapes having the same dimensions, i.e., surface area. Similarly, shapes160-1 to 160-5 represent five octagon shapes having the same dimensions,i.e., surface area. Illustratively, these octagonal shapes are regularpolygons. However, the inventive concept is not so limited. As can befurther observed from FIG. 2, functional areas 105, 110 and 115 havesimilar dimensions. Illustratively, functional area 105 has a width,a₁₀₅, and an associated density ρ₁₀₅.

In accordance with an aspect of the invention, the placement (C_(x)),size (b_(x)) and shape (S_(x)) of a dummy structure x to be added to alayer 101 is determined as a function of the width a and density ρ(a) ofone or more functional areas of the substrate.

Illustratively, the placement of a dummy structure, C_(x), is determinedby:

C _(x)=ƒ(a,ρ(a)),  (1)

where, as noted above, a is the width of a functional area, while ρ(a)represents the density of the functional area (where the density, ρ, isitself typically a function of the shape of the functional area).

The size of a dummy structure, b_(x), is determined by:

b _(x)=ƒ(C _(x)).  (2)

Finally, the shape of a dummy structure, S_(x), is determined by:

S _(x)=ƒ(b _(x)).  (3)

Assume that processing to add dummy structures to a material layer of asubstrate is performed in a vertical direction relative to location andwidth of functional areas therein. With respect to equation (1), thefunction ƒ(a, ρ(a)) selects the placement, size and shape of dummystructures to be added to a layer to the size of functional areas asrepresented by a and the density of the shapes ρ(a). An illustrativeformula for this function is:

$\begin{matrix}{C_{x} = {{\alpha {\sum\limits_{i = 1}^{i = n}\; \frac{1}{\left( {a_{i}d_{i}} \right)}}} + {\beta \frac{n}{d_{n}}}}} & (4)\end{matrix}$

where n is the number of nearest neighbor functional areas in thevertical direction to the location being processed, d_(n) is thedistance over which the n nearest neighbor functional areas aredistributed, a_(i) the size of each functional area in the verticaldirection, and d_(i) the distance between the ith functional area andthe location being processed.

The distance d_(n) is a parameter preferably selected by a computer oroperator of a computer performing the processing such that it can beadjusted in accordance with the density of patterns on a particularmaterial layer or a particular portion of a material layer. For example,when the distance between functional areas of a layer is large, thedistance d_(n) that is selected for processing should also be large. Onthe other hand, when the distance between functional areas of a layer issmall, the distance d_(n) can be correspondingly small in order forprocessing to be performed with the correct granularity.

The constants α and β are preferably selected based on experimentaldata. Preferably they are selected based on measurements of thewidth-control of the neighboring structures against different densitiesat which dummy structures are provided to fill a material layer.

The first term of equation (4) weights the vertical width a_(i) of eachneighbor functional area with the distance d_(i) of each such functionalarea from the location being processed. The second term of equation (4)depends on the numerical density (n/d_(n)) of functional areas withinthe distance d_(n) surrounding the location being processed.Accordingly, the placement C_(x) of a dummy structure x, in units ofdistance from the nearest neighboring functional area, is determinedbased on a weighted sum of the pattern density within a space ofdistance d_(n) surrounding the location, as well as the numericaldensity of the functional areas.

Thus, for example, when neighboring functional areas within distanced_(n) surrounding the location being processed are disposed atrelatively large distances d_(i), the first term in equation (4) will besmall. When there are relatively few such shapes over the distance d_(n)selected for processing, the second term of equation (4) will be small.Accordingly, processing determines that the local pattern density andnumerical density are low. The dummy structure is therefore placed at adistance C_(x) which is close to the nearest functional area of thematerial layer.

Alternatively, when respective distances d_(i) from the location beingprocessed to neighboring functional areas is small, the first term ofequation (4) becomes larger, such that the placement C_(x) of a dummystructure is provided at a greater distance from the nearest functionalarea.

As can be observed from equation (2), the size of the dummy structureb_(x) is a function of the placement C_(x). The greater the distanceC_(x) at which a dummy structure is placed from a nearest neighborfunctional area, the larger that the dummy structure is provided. Insuch manner, requirements for patterning dummy structures are relaxed inareas of low pattern density such as near edges of a chip and withinareas of low circuit density. Moreover, the requirements for buildingand using critical dimensioned masks are relaxed because dummystructures having critical dimensions or near critical dimensions arenot used except in such areas where they are specifically needed tomatch the numerical density of functional areas.

From equation (3), the shape of a dummy structure is a function of thesize b_(x). Illustratively, the shape of the dummy structure is aregular polygon such that the enclosed area is illustratively maximizedas a function of the size b_(x). In an embodiment, the shape of a dummystructure is selected based on the size b_(x) of the dummy structure,such that larger dummy structures are patterned having a larger numberof sides than smaller dummy structures. For example, a small dummystructure x can be a regular polygon having few sides due tophotolithographic process constraints, for example, in patterning smallfeatures in the material layer. On the other hand, when the size of thedummy structure is large and such constraints are not as imposing, thedummy structure can be a regular polygon having a greater number ofsides such that its shape more nearly approximates that of a circulardisk.

As illustrated in FIG. 2, dummy structures are provided as havingoctagonal shapes as an example of a regular polygon. Other types ofshapes may be used and different shapes may be arranged on the samelayer.

An illustrative flow chart of a method in accordance with the principlesof the invention is shown in FIG. 3. First, the density (ρ), width (a)and location of n functional areas of a layer within a distance d_(n)surrounding a location being processed are determined in step 305. Then,the placement, size and shape of a dummy structure are determined as afunction of ρ and a in step 310. In particular, the placement, C_(x), ofthe dummy structure is a function of a and ρ. The size of the dummystructure b_(x) is a function of the placement C_(x). The shape of thedummy structure is a function of the size b_(x). The shape isillustratively a regular polygon such that the enclosed area ismaximized. Finally, the dummy structures are placed in step 315.

As a result of the above, it is possible to further improve yield andreliability in semiconductor manufacturing processes. For example, in anexample, dummy structures are added to a photoresist layer on asubstrate to aid in equilibrating developer solution rates. In anotherexample, dummy structures are added to a pattern of a layer to aid inmaking rates of etching material from that layer more uniform. In yetanother example, dummy structures are added to a material layer to helpachieve better planarization through a process such as CMP.

Although the invention herein has been described with reference toparticular embodiments, it is to be understood that these embodimentsare merely illustrative of the principles and applications of thepresent invention. It is therefore to be understood that numerousmodifications may be made to the illustrative embodiments and that otherarrangements may be devised without departing from the spirit and scopeof the present invention as defined by the appended claims. For example,although the inventive concept is illustrated in the context of anoctagon shape, the inventive concept is not so limited. Also, theinventive concept is valid for application to any kind of material layerincluding the manufacture of compact discs, and flat panel displays.

1. A method of manufacturing a semiconductor device, the methodcomprising: providing a substrate; forming a plurality of layers on thesubstrate, each layer having one or more functional areas; forming oneor more dummy structures on at least a first layer of the layers,wherein the forming of one or more dummy structures comprises:determining a density and location of at least one functional area onthe first layer; and adding dummy structures to the first layer as afunction of the determined density and determined location, wherein theadding includes determining a placement of one dummy structure as afunction of the width and density of functional areas within apredetermined distance of a location, and determining a size of the onedummy structure as a function of the determined placement.
 2. The methodof claim 1 further comprising determining a shape of the one dummystructure as a function of the determined size.
 3. The method of claim1, wherein the placement of the dummy structures are determined at leastin part in accordance with the equation:${C_{x} = {{\alpha {\sum\limits_{i = 1}^{i = n}\; \frac{1}{\left( {a_{i}d_{i}} \right)}}} + {\beta \left( \frac{n}{d_{n}} \right)}}},$wherein n is a count of nearest neighbor functional areas in a verticaldirection to the location being processed; d_(n) is a distance overwhich the n nearest neighbor functional areas are distributed; a_(i) isa size of each functional area in the vertical direction; d_(i) is adistance between the i^(th) functional area and the location beingprocessed; and α and β are constants.
 4. The method of claim 3, whereind_(n) is based upon the distance between functional areas.
 5. The methodof claim 1, wherein the density and location are determined relative toa first distance from the location.
 6. A method of manufacturing asemiconductor device, the method comprising: providing a substrate;forming a plurality of layers on the substrate, each layer having one ormore functional areas; forming one or more dummy structures on at leasta first layer of the layers, wherein the forming of dummy structurescomprises: determining a density and location of functional areas on thefirst layer in relation to a location being processed; and adding dummystructures to the first layer as a function of the determined densityand determined location, the dummy structures each having a placementdetermined as a function of the width and density of the functionalareas, a size determined as a function of the determined placement, anda shape determined as a function of the determined size.
 7. The methodof claim 6, wherein the size of the dummy structures are heterogenousacross the chip.
 8. The method of claim 6, wherein the density of thedummy structures are heterogenous across the chip.
 9. The method ofclaim 6, wherein the density and location are determined relative to afirst distance from the location.
 10. The method of claim 6, wherein thefirst distance is based upon the distance between functional areas. 11.A method for placing dummy structures on a chip, the method comprising:providing a substrate; forming a plurality of layers on the substrate,each layer having one or more functional areas; forming one or moredummy structures on at least one layer of the layers, wherein theforming of dummy structures comprises: determining a numerical densityof functional areas on the first layer within a first distance;determining a weighted sum of a pattern density within the firstdistance; determining a placement of a dummy structure based at least inpart on the weighted sum and the numerical density; and determining asize of the dummy structure based at least in part on the placement. 12.The method of claim 11, wherein the numerical density is determined atleast in part in accordance with the equation:$\left( \frac{n}{d_{n}} \right),$ wherein n is a count of nearestneighbor functional areas in a vertical direction to the location beingprocessed; and d_(n) is a distance over which the n nearest neighborfunctional areas are distributed.
 13. The method of claim 12, whereind_(n) is based upon the distance between functional areas.
 14. Themethod of claim 11, wherein the weighted sum is determined at least inpart in accordance with the equation:${\sum\limits_{i = 1}^{i = n}\; \frac{1}{\left( {a_{i}d_{i}} \right)}},$wherein n is a count of nearest neighbor functional areas in a verticaldirection to the location being processed; a_(i) is a size of eachfunctional area in the vertical direction; and d_(i) is a distancebetween the i^(th) functional area and the location being processed. 15.The method of claim 11, further comprising determining a shape of thedummy structure as a function of the size.
 16. A method of placing dummystructures, the method comprising selecting a region on a chip for dummystructure processing; and determining a placement of a dummy structurewithin the region based upon: a number of nearest functional areaswithin a predetermined distance from the region; a distance between eachof the nearest functional areas and the region; and a pattern density ofeach functional area; a width of each of the nearest functional areas.17. The method of claim 16, wherein the width is measured along a sameaxis as the distance between each of the nearest functional areas andthe region.
 18. The method of claim 16, further comprising: determininga size of the dummy structure, wherein the size of the dummy structureis based upon a distance from the dummy structure to at least one of thenearest functional areas.
 19. The method of claim 18, furthercomprising: determining a shape of the dummy structure, wherein theshape of the dummy structure is based upon the size of the dummystructure.
 20. The method of claim 19, wherein the shape is a polygon,and wherein a number of sides of the polygon is selected based upon thesize of the dummy structure.